Global Power Technology Co., Ltd. (GPT for short) is one of the pioneers in the industrialization of China's silicon carbide (SiC) power devices. GPT is committed to the development of China's semiconductor power device manufacturing industry and provides high-quality semiconductor power device products and professional services to global power device consumers.
Koown as the first SiC power device manufacturer in China,GPT owns a complete semiconductor fab located in the Northern Territory of Dongsheng Science and Technology Park with elegant environment in Zhongguancun,Beijing.The production line is compatible with 4/6-inch wafer fabrication.
As the very first domestic SiC device R&D and production platform service company, GPT's production line covers basic core technology products, SIC molding products and multiple industrial solutions. The company's core products are represented by SiC Schottky diodes, such as 600V/2A-100A, 1200V/2A-50A, 1700V/5A -50A, 3300V/0.6A-50A. series of silicon carbide Schottky diode products have been Put into mass production, the quality of the products can be compared with the advanced level of the same industry in the world. GPTis exploring and developing together with industry peers, research institutes, and domestic and foreign experts, and is expanding SiC power devices to a wider range of applications.

First silicon carbide device fabrication and application solution provider in China

One of the pioneers in the industrialization of China's silicon carbide (SiC) power devices

Complete silicon carbide processing line and experienced technical team

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